IEET-2016

Experimental Study of the Re-Emission During Thin Film Etching in the Outside the Electrodes Discharge Plasma

Podlipnov, V., Kolpakov, V.

Abstract.The article presents the results of Cr-SiO₂ structure of the etching plasma high-voltage gas discharge in CF₄ + O₂ medium at a discharge current of 80 mA, voltage 1.2 kV and duration of the bombardment of the surface under study and 5-minutes. Detected sputtering deposition products within the windows in the mask in the chromium mode 1.2 kV, 80 mA. The deposited products formed a coating of vertically oriented pyramidal clusters. The images of scanning electron microscopy (SEM) are represented. Results of a study of the Raman spectra are presented. The results showed that the deposited film is a kind of compounds Cr₂NO_x.

Keywords:diffusion, ion-electron beam particles, annealing, pickling, reprecipitation, chromium, metal mask, chromium nitride, chromium oxide