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R-C-NR Structure Based on MOSFET

Ushakov, P., Shadrin, A.

Abstract. Paper presents one of the possible realizations of the R-C-NR-network with distributed parameters which is based on metal-oxide-semiconductor field-effect transistor (MOSFET). Device structure is proposed, device operation and layers description are presented. The model of the new device is developed.

Keywords: RC-network, R-C-NR, distributed parameters, MOSFET, admittance matrix

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November 15, 2017

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November 17, 2017

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November 22, 2017

Plenary session

November 23–24, 2017

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Scientific conferences Kalashnikov Izhevsk State Technical University

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