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IEET-2015

R-C-NR Structure Based on MOSFET

Ushakov, P., Shadrin, A.

Abstract. Paper presents one of the possible realizations of the R-C-NR-network with distributed parameters which is based on metal-oxide-semiconductor field-effect transistor (MOSFET). Device structure is proposed, device operation and layers description are presented. The model of the new device is developed.

Keywords: RC-network, R-C-NR, distributed parameters, MOSFET, admittance matrix


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< IEET-2015

< IEET-2015

Timeline

Registration and paper submission:

till June 25, 2018

Paper review:

till July 30, 2018

Participation acceptance:

till August 6, 2018

The Conference

December 12–14, 2018

Scientific conferences Kalashnikov Izhevsk State Technical University
 
 

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